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KSA1203 KSA1203 Low Frequency Power Amplifier * 3W Output application * Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board * Complement to KSC2883 1 SOT-89 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC * TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -30 -5 -1.5 -0.3 500 1,000 150 -55 ~ 150 Units V V V A A mW mW C C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -30V, IE=0 VBE= -5V, IC=0 VCE= -2V, IC= -500mA IC= -1.5A, IB= -30mA VCE= -2V, IC= -500mA VCE= -2V, IC= -500mA VCB= -10V, IE=0, f=1MHz 120 50 100 Min. -30 -5 -100 -100 320 -2.0 -1.0 V V MHz pF Typ. Max. Units V V nA nA hFE Classification Classification hFE O 100 ~ 200 Marking Y 160 ~ 320 SGX hFE grade (c)2004 Fairchild Semiconductor Corporation Rev. A3, June 2004 KSA1203 Typical Characteristics -1.6 -1.4 1000 IB =-10mA IB =-8mA VCE = -2V IC[A], COLLECTOR CURRENT IB =-6mA IB =-4mA -1.0 -0.8 hFE, DC CURRENT GAIN -1.2 100 IB =-3mA -0.6 IB =-2mA -0.4 IB =-1mA -0.2 IB =0mA -0 -2 -4 -6 -8 -10 -12 -14 -16 10 -1 -10 -100 -1000 -10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1.6 VCE(sat)[V], SATURATION VOLTAGE IC = 50IB VCE = -2V -1.4 IC[A], COLLECTOR CURRENT -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -1 -0.1 -0.01 -1 -10 -100 -1000 -10000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 ICMAX(Pulse) Ta=25 C Single Pulse PC[W], POWER DISSIPATION s 1m s m 10 o 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IC[A], COLLECTOR CURRENT ICMAX(DC) -1 10 0m s 1s M ou nt ed on Ce ra m ic -0.1 Bo ar d VCEOMAX (2 50 m m X0 . 2 8m m ) 150 175 200 -0.01 -0.1 -1 -10 -100 0 25 50 o 75 100 125 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2004 Fairchild Semiconductor Corporation Rev. A3, June 2004 KSA1203 Package Dimensions SOT-89 4.50 0.20 1.65 0.10 C0.2 (0.50) 1.50 0.20 (0.40) 0.20 2.50 0.50 0.10 1.50 TYP 1.50 TYP 0.40 0.10 0.40 +0.10 -0.05 (1.10) 4.10 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A3, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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